New alloy bonding wire for microelectronics

A new type of inner lead material used for LED packaging and IC packaging in microelectronics industries.

Features of products:

 1. excellent antioxidant capacity on surface

 2. no need for protective gas during bonding

 3. same hardness and wire hardness as gold bonding wire

 4. lower cost than gold bonding wire

Diameter:

mm	0.018	0.02	0.023	0.025	0.03
mil	0.7	0.8	0.9	1	1.2

special order avaliable

Alloy Wire Mechanical Properties:

Diameter		Weight	Elongation	Breaking load
mm	mil	Mg/20cm	%	CN
18±1	0.7	0.477-0.595	≥2	>3
19±1	0.75	0.534-0.660	≥2	>3
20±1	0.8	0.595-0.727	≥3	>4
21±1	0.84	0.660-0.798	≥3	>4
22±1	0.88	0.727-0.823	≥3	>5
23±1	0.9	0.798-0.950	≥3	>6
25±1	1.0	0.950-1.115	≥4	>7
28±1	1.1	1.202-1.387	≥4	>9
30±1	1.2	1.387-1.585	≥5	>11
32±1	1.25	1.585-1.796	≥5	>12
33±1	1.3	1.796-1.907	≥6	>13
38±1	1.5	2.256-2.509	≥8	>18
50±2	2.0	3.80-4.46	≥8	>30

New alloy bonding wire for microelectronics